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data sheet 1 of 11 rev. 05.1, 2009-02-24 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! PTFA212001E ptfa212001f confidential, limited internal distribution description the PTFA212001E and ptfa212001f are 200-watt ldmos fets designed for single- and two-carrier wcdma power amplifier applications in the 2110 to 2170 mhz band. features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. manufactured with infineon's advanced ldmos process, these devices provide excellent thermal performance and superior reliability. PTFA212001E package h-36260-2 thermally-enhanced high power rf ldmos fets 200 w, 2110 ? 2170 mhz 2-carrier wcdma drive-up v dd = 30 v, i dq = 1600 ma, ? = 2140 mhz, 3gpp wcdma signal, p/a r = 8 db, 10 mhz carrier spacing -53 -48 -43 -38 -33 -28 -23 34 36 38 40 42 44 46 48 average output power (dbm) im3 (dbc), acpr (dbc) 0 5 10 15 20 25 30 drain efficiency (%) acpr efficiency im3 ptfa212001f package h-37260-2 features ? thermally-enhanced packages, pb-free and rohs compliant ? broadband internal matching ? typical two-carrier wcdma performance at 2140?mhz, 30 v - average output power = 50 w - linear gain = 15.8 db - efficiency = 28% - intermodulation distortion = ?35.5 dbc - adjacent channel power = ?40 dbc ? typical single-carrier wcdma performance at 2140 mhz, 30 v, 3gpp signal, p/ar = 7.5 db - average output power = 70 w - linear gain = 15.5 db - efficiency = 34% - adjacent channel power = ?37 dbc ? typical cw performance, 2170 mhz, 30 v - output power at p?1db = 220 w - efficiency = 54% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability, low hci drift ? capable of handling 5:1 vswr @ 30 v, 200?w?(cw) output power *see infineon distributor for future availability.
data sheet 2 of 11 rev. 05.1, 2009-02-24 PTFA212001E ptfa212001f confidential, limited internal distribution rf characteristics wcdma measurements (tested in infineon test fixture ) v dd = 30 v, i dq = 1.6 a, p out = 50 w average ? 1 = 2135 mhz, ? 2 = 2145 mhz, 3gpp signal, channel bandwidth = 3.84 mhz , peak/average = 8 db @ 0.01% ccdf characteristic symbol min typ max unit gain g ps 15.3 15.8 ? db drain efficiency h d 26.5 28 ? % intermodulation distortion imd ? ?35.5 ?34 dbc two-tone measurements ( not subject to production test?verified by design/characterization in infineon test fixture ) v dd = 30 v, i dq = 1.6 a, p out = 200 w pep, ? = 2140 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps ? 15.8 ? db drain efficiency h d ? 38.5 ? % intermodulation distortion imd ? ?28 ? dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 30 v, v gs = 0 v i dss ? ? 1.0 a v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.05 ? w operating gate voltage v ds = 30 v, i dq = 1.6 a v gs 2.0 2.5 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a
data sheet 3 of 11 rev. 05.1, 2009-02-24 PTFA212001E ptfa212001f confidential, limited internal distribution broadband performance v dd = 30 v, i dq = 1600 ma, p out = 50.0 dbm 10 15 20 25 30 35 2050 2090 2130 2170 2210 2250 frequency (mhz) gain (db), efficiency (%) -35 -30 -25 -20 -15 -10 -5 input return loss (db) gain efficiency return loss two-carrier wcdma at selected biases v dd = 30 v, ? = 2140 mhz, 3gpp wcdma signal, p/ar = 8 db, 10 mhz carrier spacing, series show i dq -55 -50 -45 -40 -35 -30 35 37 39 41 43 45 47 average output power (dbm) 3rd order imd (dbc) 1.6 a 1.8 a 2.0 a 1.4 a *see infineon distributor for future availability. maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 625 w above 25c derate by 3.57 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 200 w cw) r q jc 0.28 c/w ordering information type and version package type package description marking PTFA212001E v4 h-36260-2 thermally-enhanced slotted flange, single-ended PTFA212001E ptfa212001f v4 h-37260-2 thermally-enhanced earless flange, single-ended ptfa212001f typical performance (data taken in a production test fixture)
data sheet 4 of 11 rev. 05.1, 2009-02-24 PTFA212001E ptfa212001f confidential, limited internal distribution 2-tone drive-up at optimum i dq v dd = 30 v, i dq = 1600 ma, ? = 2140 mhz, tone spacing = 1 mhz -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 39 41 43 45 47 49 51 53 55 output power, pep (dbm) 0 5 10 15 20 25 30 35 40 45 50 drain efficiency (%) im5 efficiency im7 im3 intermodulation distortion (dbc) voltage sweep i dq = 1600 ma, ? = 2140 mhz, tone spacing = 1 mhz, p out (pep) = 53 dbm -45 -40 -35 -30 -25 -20 -15 -10 23 25 27 29 31 33 supply voltage (v) 3rd order imd (dbc) 10 15 20 25 30 35 40 45 50 gain efficiency im3 up gain (db), drain efficiency (%) power sweep, cw conditions v dd = 30 v, i dq = 1600 ma, ? = 2170 mhz 13 14 15 16 17 18 0 40 80 120 160 200 240 output power (w) gain (db) 10 20 30 40 50 60 drain efficiency (%) gain efficiency t case = 25c t case = 90c single-carrier wcdma drive-up v dd = 30 v, i dq = 1600 ma, ? = 2140 mhz, 3gpp wcdma signal, tm1 w/16 dpch, 67% clipping, p/a r = 8.5 db, 3.84 mhz bw -55 -50 -45 -40 -35 33 35 37 39 41 43 45 47 49 average output power (dbm) 0 10 20 30 40 drain efficiency (%) adjacent channel power ratio (db) efficiency acpr acpr up acpr low typical performance (cont.)
data sheet 5 of 11 rev. 05.1, 2009-02-24 PTFA212001E ptfa212001f confidential, limited internal distribution output peak-to-average ratio compression (parc) at various power levels v dd = 30 v, i dq = 1500 ma, ? = 2170 mhz, single-carrier wcdma input par = 7.5 db 0.001 0.01 0.1 1 10 100 1 2 3 4 5 6 7 8 peak-to-average (db) probability (%) 52 dbm 50.5 dbm 50 dbm 48 dbm 46 dbm input power gain vs. power sweep (cw) over temperature v dd = 30 v, i dq = 1500 ma, ? = 2170 mhz 12 13 14 15 16 17 1 10 100 1000 output power (w) power gain (db) ?15c 25c 85c bias voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage (v) 0.44 a 1.32 a 2.20 a 3.30 a 6.61 a 9.91 a 13.22 a 16.52 a intermodulation distortion products vs. tone spacing v dd = 30 v i dq = 1600 ma, ? = 2140 mhz, p out = 53 dbm pep -55 -50 -45 -40 -35 -30 -25 -20 -15 0 10 20 30 40 tone spacing (mhz) intermodulation distortion (dbc) 3rd order 5th 7th typical performance (cont.)
data sheet 6 of 11 rev. 05.1, 2009-02-24 PTFA212001E ptfa212001f confidential, limited internal distribution z source z load g s d frequency z source w z load w mhz r jx r jx 2080 18.2 4.1 1.1 2.5 2110 19.0 3.2 1.0 2.8 2140 19.8 2.3 1.0 3.0 2170 20.4 1.0 1.0 3.2 2200 20.8 ?0.6 1.0 3.5 0 . 1 0 . 3 0 . 5 0 . 2 0 . 4 0 . 1 - w a v e l e n g t h s t o w a r d g e n e o w a r d l o a d - 0 . 0 z load z source 2200 mhz 2080 mhz 2080 mhz 2200 mhz z 0 = 50 w broadband circuit impedance see next page for circuit information
data sheet 7 of 11 rev. 05.1, 2009-02-24 PTFA212001E ptfa212001f confidential, limited internal distribution a 2 1 2 0 0 1 e f _ s c h rf_out rf_in c3 0.001f c2 0.001f q1 bcp56 r2 1.3k v qq1 lm7805 0.001f v dd r1 1.2k v r3 2k v r8 2k v r5 2k v l 8 dut c4 4.7f 16v c5 0.1f r6 5.1k v c6 7.5pf c8 0.2pf l 2 l 3 l 4 l 7 l 5 l 9 c10 4.7f 16v c11 0.1f c12 7.5pf r7 5.1k v c9 0.9pf l 6 l 1 c7 8.2pf c26 0.4pf c25 0.4pf c29 8.2pf c19 8.2pf c21 1f c20 2.2f c24 10f 50v c23 0.1f l2 c28 0.5pf c27 0.5pf c13 8.2pf c15 1f c14 2.2f c18 10f 50v c17 0.1f l 12 l 13 l 14 l 15 l 16 l 17 l 10 l 11 v dd l1 c1 c16 1f c22 1f reference circuit reference circuit schematic for ? = 2140 mhz circuit assembly information dut PTFA212001E or ptfa212001f ldmos transistor pcb 0.76 mm [.030"] thick, e r = 3.48 rogers ro4350 1 oz. copper microstrip electrical characteristics at 2140 mhz 1 dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.042 l , 50.0 w 3.56 x 1.68 0.140 x 0.066 l 2 0.048 l , 50.0 w 4.11 x 1.68 0.162 x 0.066 l 3 0.026 l , 50.0 w 2.08 x 1.68 0.082 x 0.066 l 4 0.059 l , 50.0 w 5.03 x 1.68 0.198 x 0.066 l 5 (taper) 0.062 l , 50.0 w / 6.9 w 5.00 x 1.68 / 20.32 0.197 x 0.066 / 0.800 l 6 0.015 l , 6.9 w 1.14 x 20.32 0.045 x 0.800 l 7 0.028 l , 6.9 w 2.16 x 20.32 0.085 x 0.800 l 8, l 9 0.136 l , 60.0 w 11.63 x 1.27 0.458 x 0.050 l 10, l 11 0.254 l , 51.2 w 21.51 x 1.65 0.847 x 0.065 l 12 0.071 l , 5.0 w 5.49 x 28.83 0.216 x 1.135 l 13 (taper) 0.019 l , 5.0 w / 6.8 w 1.52 x 28.83 / 20.62 0.060 x 1.135 / 0.812 l 14 (taper) 0.026 l , 6.8 w / 13.5 w 2.11 x 20.62 / 9.65 0.083 x 0.812 / 0.380 l 15 (taper) 0.026 l , 13.5 w / 40.9 w 2.06 x 9.65 / 2.34 0.081 x 0.380 / 0.092 l 16 0.029 l , 40.9 w 2.77 x 2.34 0.109 x 0.092 l 17 0.107 l , 50.0 w 9.04 x 1.68 0.356 x 0.066 1 electrical characteristics are rounded.
data sheet 8 of 11 rev. 05.1, 2009-02-24 PTFA212001E ptfa212001f confidential, limited internal distribution reference circuit (cont.) reference circuit assembly diagram* (not to scale) component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4, c10 capacitor, 4.7 f, 16 v digi-key pcs3475ct-nd c5, c11, c17, c23 capacitor, 0.1 f digi-key pcc104bct-nd c6, c12 ceramic capacitor, 7.5 pf atc 100b 7r5 c7, c13, c19, c29 ceramic capacitor, 8.2 pf atc 100b 8r2 c8 ceramic capacitor, 0.2 pf atc 600s 0r2 bt c9 ceramic capacitor, 0.9 pf atc 600a 0r9 bt c14, c20 capacitor, 2.2 f digi-key 445-1474-2-nd c15, c16, c21, c22 ceramic capacitor, 1 f digi-key 445-1411-2-nd c18, c24 tantalum capacitor, 10 f, 50 v garrett electronics tpse106k050r0400 c25, c26 ceramic capacitor, 0.4 pf atc 100b 0r4 c27, c28 ceramic capacitor, 0.5 pf atc 100b 0r5 l1, l2 ferrite, 8.9 mm elna magnetics bds 4.6/3/8.9-4s2 q1 transistor infineon technologies bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor 1.2 k-ohms digi-key p1.2kgct-nd r2 chip resistor 1.3 k-ohms digi-key p1.3kgct-nd r3, r5 chip resistor 2 k-ohms digi-key p2kect-nd r4 not used r6, r7 chip resistor 5.1 k-ohms digi-key p5.1kect-nd r8 potentiometer 2 k-ohms digi-key 3224w-202etr-nd * gerber files for this circuit available on request r3 c5 r6 r5 c6 c11 c12 c10 c8 c9 c4 c7 r7 c25 c27 c28 c26 c17 c23 c29 c21 c19 c20 c13 c16 c14 r8 c1 c3 c2 r2 r1 a212001in_01 ro4350_.030 a212001out_01 ro4350_.030 a212001ef_assy rf_in rf_out l1 v dd v dd v dd q1 qq1 l2 c24 c18 c15 c22
data sheet 9 of 11 rev. 05.1, 2009-02-24 PTFA212001E ptfa212001f confidential, limited internal distribution package outline specifications package h-36260-2 diagram notes?unless otherwise specified: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s, d, g - flange & leads: 1.14 0.38 micron [45 15 microinch] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower c l c l h-36+37260-2_36260 / 04-25-08 0.0381 [.0015] -a- 22.350.23 [.880.009] 4.830.50 [.190.020] 2x 12.70 [.500] 23.370.51 [.920.020] 4x r 1.52 [r.060] 34.04 [1.340] d s g flange 13.72 [.540] 45 x 2.03 [.080] sph 1.57 [.062] 2x r1.63 [r.064] 4.110.38 [.162.015] 27.94 [1.100] c l 1.02 [.040] +0.10 lid 13.21 ?0.15 +.004 [.520 ] ?.006
data sheet 10 of 11 rev. 05.1, 2009-02-24 PTFA212001E ptfa212001f confidential, limited internal distribution package outline specifications (cont.) package h-37260-2 diagram notes?unless otherwise specified: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s, d, g - flange & leads: 1.14 0.38 micron [45 15 microinch] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower +0.10 lid 13.21 ?0.15 +.004 [.520 ] ?.006 c l c l h-36+37260-2_37260 / 04-25-08 sph 1.57 [.062] 23.370.51 [.920.020] 2x 12.70 [.500] 45 x 2.031 [.080] d g s -a- 4.110.38 [.162.015] lid 22.350.23 [.880.009] flange 23.11 [.910] 13.72 [.540] 4.830.50 [.190.020] 0.0381 [.0015] +0.381 4x r0.508 ?0.127 +.015 [r.020 ] ?.005 1.02 [.040]
data sheet 11 of 11 rev. 05.1, 2009-02-24 PTFA212001E/f confidential, limited internal distribution revision history: 2009-02-24 data sheet previous version: 2007-12-05, data sheet ( 2006-06-12, preliminary data sheet) page subjects (major changes since last revision) 1, 2, 9, 10 update product to v4, with new package technologies. update package outline diagrams. 1, 2 update gain specifications. 8 fixed typing error we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international goldmos ? is a registered trademark of infineon technologies ag. edition 2009-02-24 published by infineon technologies ag 81726 munich , germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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